Invention Grant
US08405443B2 Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit
有权
具有存储功能的晶体管电路,以及包括传输晶体管电路的开关盒电路
- Patent Title: Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit
- Patent Title (中): 具有存储功能的晶体管电路,以及包括传输晶体管电路的开关盒电路
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Application No.: US13419555Application Date: 2012-03-14
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Publication No.: US08405443B2Publication Date: 2013-03-26
- Inventor: Hideyuki Sugiyama , Tetsufumi Tanamoto , Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito
- Applicant: Hideyuki Sugiyama , Tetsufumi Tanamoto , Takao Marukame , Mizue Ishikawa , Tomoaki Inokuchi , Yoshiaki Saito
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
A pass transistor circuit according to an embodiment includes: a first input/output terminal connected to a first signal line; a second input/output terminal connected to a second signal line; a first device having a first terminal connected to a first power supply and a second terminal; a second device having a third terminal connected to the second terminal and a fourth terminal connected to a second power supply; a first transistor having one of source/drain connected to the second terminal, a gate receiving a first control signal; and a second transistor having a gate connected to the other one of source/drain of the first transistor, one of source/drain connected to the first input/output terminal, and the other one of source/drain connected to the second input/output terminal. One of the first and second devices is a nonvolatile memory device, the other one of the first and second devices is a MOSFET.
Public/Granted literature
Information query
IPC分类: