Invention Grant
- Patent Title: Semiconductor device and multilayer semiconductor device
- Patent Title (中): 半导体器件和多层半导体器件
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Application No.: US13067660Application Date: 2011-06-17
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Publication No.: US08405221B2Publication Date: 2013-03-26
- Inventor: Makoto Imai
- Applicant: Makoto Imai
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2010-170815 20100729
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Disclosed herein is a semiconductor device including: an input terminal receiving, if a preceding-stage semiconductor device is layered on a predetermined one of an upper layer and a lower layer, a bit train outputted from the preceding-stage semiconductor device; a semiconductor device identifier hold block holding a semiconductor device identifier for uniquely identifying the semiconductor device; a semiconductor device identifier computation block executing computation by using the semiconductor device identifier to update the semiconductor device identifier held in the semiconductor device identifier hold block according to a result of the computation; a control block once holding data of a bit train entered from the input terminal to control updating of the semiconductor device identifier executed by the semiconductor device identifier computation block based on the held data; and an output terminal outputting the bit train held in the control block to a succeeding-stage semiconductor device layered on another layer.
Public/Granted literature
- US20120025391A1 Semiconductor device and multilayer semiconductor device Public/Granted day:2012-02-02
Information query
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