Invention Grant
- Patent Title: Semiconductor device including two heat sinks and method of manufacturing the same
- Patent Title (中): 包括两个散热器的半导体器件及其制造方法
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Application No.: US12801862Application Date: 2010-06-29
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Publication No.: US08405194B2Publication Date: 2013-03-26
- Inventor: Masayoshi Nishihata , Yasushi Ookura
- Applicant: Masayoshi Nishihata , Yasushi Ookura
- Applicant Address: JP Kariya
- Assignee: Denso Corporation
- Current Assignee: Denso Corporation
- Current Assignee Address: JP Kariya
- Agency: Posz Law Group, PLC
- Priority: JP2009-155051 20090630; JP2010-22340 20100203
- Main IPC: H01L23/367
- IPC: H01L23/367

Abstract:
A semiconductor device includes a semiconductor element, a first heat sink, a second heat sink, and a resin member. The semiconductor element has first and second surfaces. The first heat sink has a first heat radiation surface and a first end surface. The first end surface is coupled with the first surface. The second heat sink has a second heat radiation surface, the second end surface being opposite the second heat radiation surface, and a depressed section depressed toward the second heat radiation surface. The second surface of the semiconductor element is coupled with a bottom surface of the depressed section. The resin member is disposed in the depressed section and seals the semiconductor element, the first heat sink, and the second heat sink in such a manner that the first heat radiation surface is exposed outside the resin member.
Public/Granted literature
- US20100327455A1 Semiconductor device including two heat sinks and method of manufacturing the same Public/Granted day:2010-12-30
Information query
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