Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12548911Application Date: 2009-08-27
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Publication No.: US08405188B2Publication Date: 2013-03-26
- Inventor: Wensheng Wang
- Applicant: Wensheng Wang
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L29/92
- IPC: H01L29/92 ; H01L21/02
Abstract:
An upper electrode of a ferroelectric capacitor has a first layer formed of a first oxide expressed by a chemical formula AOx1 (A: metal, O: oxygen) using a stoichiometric composition parameter x1, and expressed by a chemical formula AOx2 using a actual composition parameter x2, and a second layer formed of a second oxide, formed on the first layer, expressed by a chemical formula BOy1 (B: metal) using a stoichiometric composition parameter y1 and expressed by a chemical formula BOy2 using a actual composition parameter y2, which includes at least one of stone-wall crystal and column crystal.
Public/Granted literature
- US20090315144A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2009-12-24
Information query
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