A solid-state imaging device comprises a plurality of pixels that includes a photoelectric conversion portion, a charge-voltage converter that receives the charge and converts the charge to a voltage, an amplifier that outputs a signal corresponding to a potential of the charge-voltage converter, a transfer portion that transfers a charge from the photoelectric conversion portion to the charge-voltage converter, and a reset transistor that resets a potential of the charge-voltage converter; a connection transistor that connects or disconnects the charge-voltage converter of at least one of the pixels and the charge-voltage converter of at least one of the other pixels. A threshold voltage of the connection transistor is higher than a threshold voltage of the reset transistor.