Invention Grant
- Patent Title: Solid-state image sensor device
- Patent Title (中): 固态图像传感器装置
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Application No.: US12842220Application Date: 2010-07-23
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Publication No.: US08405178B2Publication Date: 2013-03-26
- Inventor: Shinya Sugino , Satoshi Sakai , Yusuke Nonaka , Tomohiro Saito , Tomoyasu Furukawa , Hiroyuki Hayashi
- Applicant: Shinya Sugino , Satoshi Sakai , Yusuke Nonaka , Tomohiro Saito , Tomoyasu Furukawa , Hiroyuki Hayashi
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2009-188189 20090817
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.
Public/Granted literature
- US20110037134A1 Solid-State Image Sensor Device Public/Granted day:2011-02-17
Information query
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