Invention Grant
- Patent Title: Magnetic memory devices
- Patent Title (中): 磁存储器件
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Application No.: US13159236Application Date: 2011-06-13
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Publication No.: US08405173B2Publication Date: 2013-03-26
- Inventor: Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
- Applicant: Woojin Kim , Sechung Oh , Jangeun Lee , Jeahyoung Lee , Junho Jeong , Woo Chang Lim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2010-0056651 20100615
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A magnetic memory device includes a reference magnetic layer having a fixed magnetization direction, a tunnel barrier layer on the reference magnetic layer, a free layer having a variable magnetization direction on the tunnel barrier layer opposite the reference magnetic layer, and a magnetization reversal auxiliary layer on the free layer. The magnetization reversal auxiliary layer has a fixed magnetization direction that is substantially perpendicular to a plane along an interface between the tunnel barrier layer and the reference layer. The magnetization reversal auxiliary layer may be directly on the free layer, or an exchange coupling control layer may be provided between the magnetization reversal auxiliary layer and the free layer.
Public/Granted literature
- US20110303996A1 MAGNETIC MEMORY DEVICES Public/Granted day:2011-12-15
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