A semiconductor device excellent in the magnetic shielding effect of blocking off external magnetic fields is provided. The semiconductor device includes: an interlayer insulating film so formed as to cover a switching element formed over a main surface of a semiconductor substrate; a flat plate-like lead wiring; a coupling wiring coupling the lead wiring and the switching element with each other; and a magnetoresistive element including a magnetization free layer the orientation of magnetization of which is variable and formed over the lead wiring. The semiconductor device has a wiring and another wiring through which the magnetization state of the magnetization free layer can be varied. In a memory cell area where multiple magnetoresistive elements are arranged, a first high permeability film arranged above the magnetoresistive elements is extended from the memory cell area up to a peripheral area that is an area other than the memory cell area.