Invention Grant
- Patent Title: Memory cell with phonon-blocking insulating layer
- Patent Title (中): 具有隔音绝缘层的存储单元
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Application No.: US12947516Application Date: 2010-11-16
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Publication No.: US08405171B2Publication Date: 2013-03-26
- Inventor: Yuankai Zheng , Xiaohua Lou , Wei Tian , Zheng Gao , Haiwen Xi
- Applicant: Yuankai Zheng , Xiaohua Lou , Wei Tian , Zheng Gao , Haiwen Xi
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Hall Estill Attorneys at Law
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.
Public/Granted literature
- US20120119313A1 Memory Cell With Phonon-Blocking Insulating Layer Public/Granted day:2012-05-17
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