Invention Grant
US08405155B2 Semiconductor structure with gate structure, source/drain region and recess filling with epitaxial layer
有权
具有栅极结构，源极/漏极区域和具有外延层的凹陷填充的半导体结构
- Patent Title: Semiconductor structure with gate structure, source/drain region and recess filling with epitaxial layer
- Patent Title (中): 具有栅极结构，源极/漏极区域和具有外延层的凹陷填充的半导体结构
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Application No.: US12888430Application Date: 2010-09-23
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Publication No.: US08405155B2Publication Date: 2013-03-26
- Inventor: Chiu-Hsien Yeh , Chun-Yuan Wu , Chin-Cheng Chien
- Applicant: Chiu-Hsien Yeh , Chun-Yuan Wu , Chin-Cheng Chien
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A semiconductor structure comprises a substrate, a gate structure, at least a source/drain region, a recess and an epitaxial layer. The substrate includes an up surface. A gate structure is located on the upper surface. The source/drain region is located within the substrate beside the gate structure. The recess is located within the source/drain region. The epitaxial layer fills the recess, and the cross-sectional profile of the epitaxial layer is an octagon.
Public/Granted literature
- US20120074468A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2012-03-29
Information query
IPC分类:
