Invention Grant
- Patent Title: Semiconductor device with vertical current flow and low substrate resistance and manufacturing process thereof
- Patent Title (中): 具有垂直电流流动和低基板电阻的半导体器件及其制造工艺
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Application No.: US13357547Application Date: 2012-01-24
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Publication No.: US08405144B2Publication Date: 2013-03-26
- Inventor: Angelo Magri' , Antonio Damaso Maria Marino
- Applicant: Angelo Magri' , Antonio Damaso Maria Marino
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Graybeal Jackson LLP
- Priority: ITTO2006A0329 20060505
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor device with vertical current flow includes a body having a substrate made of semiconductor material. At least one electrical contact on a first face of the body. A metallization structure is formed on a second face of the body, opposite to the first face. The metallization structure is provided with metal vias, which project from the second face within the substrate so as to form a high-conductivity path in parallel with portions of said substrate.
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