Invention Grant
- Patent Title: Nonvolatile semiconductor memory device and manufacturing method therefor
-
Application No.: US12285750Application Date: 2008-10-14
-
Publication No.: US08405140B2Publication Date: 2013-03-26
- Inventor: Eiji Io
- Applicant: Eiji Io
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-268005 20071015
- Main IPC: H01L29/792
- IPC: H01L29/792
Abstract:
In a nonvolatile semiconductor memory device, a floating gate is formed on a semiconductor substrate through a gate insulating film, and has a first portion contacting the gate insulating film and a second portion extending upwardly from a part of a surface of the first portion. A first diffusion layer is formed in the semiconductor substrate to have a plane parallel to a surface of the semiconductor substrate. A second diffusion layer is formed in the semiconductor substrate, to have the plane. A control gate is provided near the floating gate above a channel region in the semiconductor substrate and is formed on a first side of the first portion. A conductive film is connected with the first diffusion layer and is formed on a second side of the first portion and a first side of the second portion through the first insulating film.
Public/Granted literature
- US20090096015A1 Nonvolatile semiconductor memory device and manufacturing method therefor Public/Granted day:2009-04-16
Information query
IPC分类:
