Invention Grant
US08405128B2 Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
有权
通过金属有机化学气相沉积来增强半极性（Al，In，Ga，B）N生长的方法
- Patent Title: Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
- Patent Title (中): 通过金属有机化学气相沉积来增强半极性（Al，In，Ga，B）N生长的方法
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Application No.: US12716670Application Date: 2010-03-03
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Publication No.: US08405128B2Publication Date: 2013-03-26
- Inventor: Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
- Applicant: Hitoshi Sato , John F. Kaeding , Michael Iza , Benjamin A. Haskell , Troy J. Baker , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L31/06
- IPC: H01L31/06
Abstract:
A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
Public/Granted literature
- US20100155778A1 METHOD FOR ENHANCING GROWTH OF SEMIPOLAR (AL,IN,GA,B)N VIA METALORGANIC CHEMICAL VAPOR DEPOSITION Public/Granted day:2010-06-24
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