Invention Grant
US08405127B2 Method and apparatus for fabricating a heterojunction bipolar transistor
有权
用于制造异质结双极晶体管的方法和装置
- Patent Title: Method and apparatus for fabricating a heterojunction bipolar transistor
- Patent Title (中): 用于制造异质结双极晶体管的方法和装置
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Application No.: US12034210Application Date: 2008-02-20
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Publication No.: US08405127B2Publication Date: 2013-03-26
- Inventor: Jack O. Chu , Francois Pagette
- Applicant: Jack O. Chu , Francois Pagette
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Louis J. Percello, Esq.
- Main IPC: H01L21/331
- IPC: H01L21/331
Abstract:
In one embodiment, the invention is a method and apparatus for fabricating a heterojunction bipolar transistor. One embodiment of a heterojunction bipolar transistor includes a collector layer, a base region formed over the collector layer, a self-aligned emitter formed on top of the base region and collector layer, a poly-germanium extrinsic base surrounding the emitter, and a metal germanide layer formed over the extrinsic base.
Public/Granted literature
- US20090206370A1 METHOD AND APPARATUS FOR FABRICATING A HETEROJUNCTION BIPOLAR TRANSISTOR Public/Granted day:2009-08-20
Information query
IPC分类:
