Disclosed is a light emitting device including a substrate, a reflective layer provided on the substrate, and a light emitting structure, which includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer placed between the first and second conductive semiconductor layers, wherein the first conductive semiconductor layer is an n-type semiconductor layer including GaN and doped with an n-type dopant, wherein the first conductive semiconductor layer includes a first n-type semiconductor layer and a second n-type semiconductor layer between the first n-type semiconductor layer and the active layer, wherein one surface of the first n-type semiconductor layer contacts the second n-type semiconductor layer, and wherein the surface of the first n-type semiconductor layer contacting the second n-type semiconductor layer is formed in an N-phase. The disclosed light emitting device may have improved luminous efficacy while showing reduction in crystal defects.