Invention Grant
- Patent Title: Printable thin-film transistors with high dielectric constant gate insulators and methods for producing same
- Patent Title (中): 具有高介电常数栅绝缘体的可印刷薄膜晶体管及其制造方法
-
Application No.: US12514358Application Date: 2007-11-13
-
Publication No.: US08405069B2Publication Date: 2013-03-26
- Inventor: Bernard Kippelen , Joseph Perry , Seth Marder , Philoseok Kim , Simon Jones , Joshua N. Haddock , Xiaohong Zhang , Benoit Domercq , Peter Hotchkiss
- Applicant: Bernard Kippelen , Joseph Perry , Seth Marder , Philoseok Kim , Simon Jones , Joshua N. Haddock , Xiaohong Zhang , Benoit Domercq , Peter Hotchkiss
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- International Application: PCT/US2007/023835 WO 20071113
- International Announcement: WO2008/060534 WO 20080522
- Main IPC: H01L35/24
- IPC: H01L35/24
Abstract:
Disclosed are embodiments of organic thin-film transistors (OTFT) with a gate insulator layer comprised of nanocomposites incorporating metal oxide nanoparticles coated by organic ligands and methods of fabricating such OTFTs. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.
Public/Granted literature
Information query
IPC分类:
