Invention Grant
US08405061B2 Semiconductor memory device using variable resistance element or phase-change element as memory device
有权
使用可变电阻元件或相变元件作为存储器件的半导体存储器件
- Patent Title: Semiconductor memory device using variable resistance element or phase-change element as memory device
- Patent Title (中): 使用可变电阻元件或相变元件作为存储器件的半导体存储器件
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Application No.: US12871289Application Date: 2010-08-30
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Publication No.: US08405061B2Publication Date: 2013-03-26
- Inventor: Nobuaki Yasutake
- Applicant: Nobuaki Yasutake
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-286674 20091217
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
A semiconductor memory device includes a first conductive line, a second conductive line, a cell unit, a silicon nitride film and a double-sidewall film. The first conductive line extends in a first direction. The second conductive line extends in a second direction crossing the first direction. The cell unit includes a phase-change film and a rectifier element connected in series with each other between the first conductive line and the second conductive line. The silicon nitride film is formed on a side surface of the phase-change film. The double-sidewall film includes a silicon oxide film and the silicon nitride film formed on a side surface of the rectifier element.
Public/Granted literature
- US20110147691A1 SEMICONDUCTOR MEMORY DEVICE USING VARIABLE RESISTANCE ELEMENT OR PHASE-CHANGE ELEMENT AS MEMORY DEVICE Public/Granted day:2011-06-23
Information query
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