Invention Grant
US08405052B2 Ion implanter provided with beam deflector and asymmetrical einzel lens
有权
离子注入机提供光束偏转器和不对称的einzel透镜
- Patent Title: Ion implanter provided with beam deflector and asymmetrical einzel lens
- Patent Title (中): 离子注入机提供光束偏转器和不对称的einzel透镜
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Application No.: US12905525Application Date: 2010-10-15
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Publication No.: US08405052B2Publication Date: 2013-03-26
- Inventor: Dan Nicolaescu
- Applicant: Dan Nicolaescu
- Applicant Address: JP Kyoto
- Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee: Nissin Ion Equipment Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Osha Liang LLP
- Priority: JP2010-054245 20100311
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01L21/265

Abstract:
An ion implanter has a beam deflector having a pair of magnetic poles facing each other in a z direction, insulating members provided on the respective magnetic poles, at least one pair of electrodes provided on the insulating members so as to face each other across a space through which the ion beam passes in the z direction, and at least one power source configured to apply a voltage to the pair of electrodes. The beam deflector is configured to deflect, by a magnetic field, an overall shape of the ion beam so as to be substantially parallel to the x direction. The pair of electrodes have a dimension longer than the dimension of the ion beam in the y direction, and constitute an asymmetrical einzel lens in the direction of travel of the central orbit of the ion beam.
Public/Granted literature
- US20110220808A1 ION IMPLANTER PROVIDED WITH BEAM DEFLECTOR AND ASYMMETRICAL EINZEL LENS Public/Granted day:2011-09-15
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