Invention Grant
- Patent Title: Electrode for an ionization chamber and method producing the same
- Patent Title (中): 电离室用电极及其制造方法
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Application No.: US12743288Application Date: 2008-11-17
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Publication No.: US08405041B2Publication Date: 2013-03-26
- Inventor: Mohamed Boutchich , Vijayaraghavan Madakasira , Nader Akil
- Applicant: Mohamed Boutchich , Vijayaraghavan Madakasira , Nader Akil
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP07121110 20071120
- International Application: PCT/IB2008/054796 WO 20081117
- International Announcement: WO2009/066220 WO 20090528
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
An electrode for an ionization chamber and an ionization chamber including an electrode are provided wherein the electrode comprises a substrate comprising a first material, and a plurality of nanowires extending from the substrate and manufactured by processing the first material of the substrate.
Public/Granted literature
- US20100253359A1 ELECTRODE FOR AN IONIZATION CHAMBER AND METHOD PRODUCING THE SAME Public/Granted day:2010-10-07
Information query
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