Invention Grant
US08405018B2 Semiconductor imager and method with spatially separated proximate and distal reset gates to tune relative gain 有权
半导体成像器和具有空间分离的近端和远端复位门的方法来调节相对增益

  • Patent Title: Semiconductor imager and method with spatially separated proximate and distal reset gates to tune relative gain
  • Patent Title (中): 半导体成像器和具有空间分离的近端和远端复位门的方法来调节相对增益
  • Application No.: US12800020
    Application Date: 2010-05-06
  • Publication No.: US08405018B2
    Publication Date: 2013-03-26
  • Inventor: Jan Theodoor Jozef Bosiers
  • Applicant: Jan Theodoor Jozef Bosiers
  • Applicant Address: US CA Thousand Oaks
  • Assignee: Teledyne Dalsa, Inc.
  • Current Assignee: Teledyne Dalsa, Inc.
  • Current Assignee Address: US CA Thousand Oaks
  • Agent Eric A. Gifford
  • Main IPC: H01J40/14
  • IPC: H01J40/14 H04N3/14
Semiconductor imager and method with spatially separated proximate and distal reset gates to tune relative gain
Abstract:
A semiconductor imager device is arranged for receiving a series of charge packets. It comprises a charge-to-voltage conversion circuit for receiving the charge packets on a reception capacitance and has an interconnected arrangement of a floating diffusion, a first reset gate, a reset drain and a source follower for readout. In particular, the device has a series arrangement of at least the first reset gate as a proximate reset gate and furthermore a distal reset gate, wherein in a high-gain configuration the proximate reset gate is cyclically controlled and the distal reset gate is continuously on, thus limiting the reception capacitance to a relatively low value. Alternatively, in a low-gain configuration the proximate reset gate is continuously on, thus extending the capacitance to a relatively high value and the distal reset gate replaces the proximate reset gate as being cyclically controlled for conversion of the series of charge packets.
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