Invention Grant
- Patent Title: Methods of forming nonvolatile memory devices having electromagnetically shielding source plates
- Patent Title (中): 形成具有电磁屏蔽源极板的非易失性存储器件的方法
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Application No.: US13349181Application Date: 2012-01-12
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Publication No.: US08404578B2Publication Date: 2013-03-26
- Inventor: Jong-Won Kim , Woon-Kyung Lee
- Applicant: Jong-Won Kim , Woon-Kyung Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR2008-52251 20080603
- Main IPC: H01L21/8242
- IPC: H01L21/8242

Abstract:
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a semiconductor substrate including a cell array region, memory cell transistors disposed at the cell array region, bitlines disposed on the memory cell transistors, and a source plate disposed between the memory cell transistors and the bitlines to veil the memory cell transistors thereunder.
Public/Granted literature
- US20120115294A1 METHODS OF FORMING NONVOLATILE MEMORY DEVICES HAVING ELECTROMAGNETICALLY SHIELDING SOURCE PLATES Public/Granted day:2012-05-10
Information query
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