Invention Grant
US08404562B2 Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
有权
具有石墨芯的复合晶片的制造方法以及具有石墨芯的复合晶片
- Patent Title: Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
- Patent Title (中): 具有石墨芯的复合晶片的制造方法以及具有石墨芯的复合晶片
-
Application No.: US12894344Application Date: 2010-09-30
-
Publication No.: US08404562B2Publication Date: 2013-03-26
- Inventor: Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze
- Applicant: Rudolf Berger , Hermann Gruber , Wolfgang Lehnert , Guenther Ruhl , Raimund Foerg , Anton Mauder , Hans-Joachim Schulze
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/322
- IPC: H01L21/322 ; H01L21/00 ; H01L21/31
Abstract:
According to an embodiment, a composite wafer includes a carrier substrate having a graphite core and a monocrystalline semiconductor layer attached to the carrier substrate.
Public/Granted literature
Information query
IPC分类:
