Invention Grant
US08404558B2 Method for making buried circumferential electrode microcavity plasma device arrays, and electrical interconnects
有权
用于制造埋置的圆周电极微腔等离子体器件阵列和电互连的方法
- Patent Title: Method for making buried circumferential electrode microcavity plasma device arrays, and electrical interconnects
- Patent Title (中): 用于制造埋置的圆周电极微腔等离子体器件阵列和电互连的方法
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Application No.: US13188712Application Date: 2011-07-22
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Publication No.: US08404558B2Publication Date: 2013-03-26
- Inventor: J. Gary Eden , Sung-Jin Park , Kwang-Soo Kim
- Applicant: J. Gary Eden , Sung-Jin Park , Kwang-Soo Kim
- Applicant Address: US IL Urbana
- Assignee: The Board of Trustees of the University of Illinois
- Current Assignee: The Board of Trustees of the University of Illinois
- Current Assignee Address: US IL Urbana
- Agency: Greer, Burns & Crain Ltd.
- Main IPC: H01L33/16
- IPC: H01L33/16 ; H01J17/04 ; H01J17/49

Abstract:
In a preferred method of formation embodiment, a metal foil or film is obtained or formed with micro-holes. The foil is anodized to form metal oxide. One or more self-patterned metal electrodes are automatically formed and buried in the metal oxide created by the anodization process. The electrodes form in a closed circumference around each microcavity in a plane(s) transverse to the microcavity axis, and can be electrically isolated or connected. Preferred embodiments provide inexpensive microplasma device electrode structures and a fabrication method for realizing microplasma arrays that are lightweight and scalable to large areas. Electrodes buried in metal oxide and complex patterns of electrodes can also be formed without reference to microplasma devices—that is, for general electrical circuitry.
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