Invention Grant
- Patent Title: Plasma cleaning for process chamber component refurbishment
- Patent Title (中): 等离子体清洁处理室部件整修
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Application No.: US12198193Application Date: 2008-08-26
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Publication No.: US08404135B2Publication Date: 2013-03-26
- Inventor: Jian-Bin Chiou , Wen-Cheng Cheng , Wen-Sheng Wu
- Applicant: Jian-Bin Chiou , Wen-Cheng Cheng , Wen-Sheng Wu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C23F1/00 ; C23G5/00
Abstract:
A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component.
Public/Granted literature
- US20100051581A1 PLASMA CLEANING FOR PROCESS CHAMBER COMPONENT REFURBISHMENT Public/Granted day:2010-03-04
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