Invention Grant
- Patent Title: Bit line negative potential circuit and semiconductor storage device
- Patent Title (中): 位线负电位电路和半导体存储器件
-
Application No.: US13051863Application Date: 2011-03-18
-
Publication No.: US08400848B2Publication Date: 2013-03-19
- Inventor: Yuki Fujimura
- Applicant: Yuki Fujimura
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: JP2010-213544 20100924
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
According to one embodiment, a bit line negative potential circuit includes a bit line capacitance compensation capacitor which compensates the capacitance of a bit line and a peripheral capacitance compensation capacitor which compensates the peripheral capacitance of the bit line. After the bit line is switched to a low potential, the bit line is driven based on a charging voltage of the bit line capacitance compensation capacitor and the peripheral capacitance compensation capacitor.
Public/Granted literature
- US20120075936A1 BIT LINE NEGATIVE POTENTIAL CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2012-03-29
Information query