Invention Grant
US08400841B2 Device to program adjacent storage cells of different NROM cells
有权
用于编程不同NROM单元的相邻存储单元的设备
- Patent Title: Device to program adjacent storage cells of different NROM cells
- Patent Title (中): 用于编程不同NROM单元的相邻存储单元的设备
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Application No.: US11153738Application Date: 2005-06-15
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Publication No.: US08400841B2Publication Date: 2013-03-19
- Inventor: Eduardo Maayan
- Applicant: Eduardo Maayan
- Applicant Address: IL Netanya
- Assignee: Spansion Israel Ltd.
- Current Assignee: Spansion Israel Ltd.
- Current Assignee Address: IL Netanya
- Agency: Itan, Mehulal & Sadot
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A method includes minimizing current leaking through a virtual ground pipe during access of NROM memory cells. The minimizing includes operating two neighboring memory cells generally together, which includes connecting an operation voltage to a shared local bit line of the two neighboring memory cells and connecting the external local bit lines of two neighboring memory cells to a receiving unit, such as a ground supply or two sense amplifiers. Also included is an array performing the method.
Public/Granted literature
- US20060285386A1 Accessing an NROM array Public/Granted day:2006-12-21
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