Invention Grant
US08400841B2 Device to program adjacent storage cells of different NROM cells 有权
用于编程不同NROM单元的相邻存储单元的设备

Device to program adjacent storage cells of different NROM cells
Abstract:
A method includes minimizing current leaking through a virtual ground pipe during access of NROM memory cells. The minimizing includes operating two neighboring memory cells generally together, which includes connecting an operation voltage to a shared local bit line of the two neighboring memory cells and connecting the external local bit lines of two neighboring memory cells to a receiving unit, such as a ground supply or two sense amplifiers. Also included is an array performing the method.
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