Invention Grant
- Patent Title: Semiconductor storage device
- Patent Title (中): 半导体存储设备
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Application No.: US13239266Application Date: 2011-09-21
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Publication No.: US08400821B2Publication Date: 2013-03-19
- Inventor: Fumihiko Tachibana
- Applicant: Fumihiko Tachibana
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear LLP
- Priority: JP2010-259893 20101122
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C5/06 ; G11C7/02

Abstract:
According to one embodiment, a dummy cell simulates an operation of a memory cell. A main dummy bit line transmits a signal read out from the dummy cell. An inverter makes a sense amplifier circuit to operate based on a potential of the main dummy bit line. n (n is a positive integer) number of auxiliary dummy bit lines are provided. A switching element connects at least one of the n number of auxiliary dummy bit lines to the main dummy bit line.
Public/Granted literature
- US20120127784A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2012-05-24
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