Invention Grant
US08400821B2 Semiconductor storage device 失效
半导体存储设备

Semiconductor storage device
Abstract:
According to one embodiment, a dummy cell simulates an operation of a memory cell. A main dummy bit line transmits a signal read out from the dummy cell. An inverter makes a sense amplifier circuit to operate based on a potential of the main dummy bit line. n (n is a positive integer) number of auxiliary dummy bit lines are provided. A switching element connects at least one of the n number of auxiliary dummy bit lines to the main dummy bit line.
Public/Granted literature
Information query
Patent Agency Ranking
0/0