A nonvolatile semiconductor memory device according to an embodiment includes: a memory cell array including a plurality of first lines and second lines intersecting each other and a plurality of memory cells connected at intersections of the plurality of first lines and second lines; and a first line control circuit and a second line control circuit configured to select the first lines and the second lines respectively to supply a voltage or current necessary for a resetting operation or a setting operation on the memory cells. The first line control circuit supplies unselected ones of the first lines with an unselecting voltage corresponding to the distance between the unselected first lines and the second line control circuit.