Invention Grant
- Patent Title: One-time programmable fuse with ultra low programming current
- Patent Title (中): 具有超低编程电流的一次性可编程保险丝
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Application No.: US12617363Application Date: 2009-11-12
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Publication No.: US08400813B2Publication Date: 2013-03-19
- Inventor: Jam-Wem Lee
- Applicant: Jam-Wem Lee
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G11C17/00
- IPC: G11C17/00
Abstract:
A method of operating a FinFET fuse includes providing the FinFET fuse including a drain, a gate, a source, and a channel between the drain and the source; and applying a program voltage to one of the source and the drain of the FinFET fuse to cause a punch-through in the channel of the FinFET fuse. The method further includes determining a program state of the FinFET fuse.
Public/Granted literature
- US20100202184A1 One-Time Programmable Fuse with Ultra Low Programming Current Public/Granted day:2010-08-12
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