Invention Grant
- Patent Title: Thin-film semiconductor device
- Patent Title (中): 薄膜半导体器件
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Application No.: US13181983Application Date: 2011-07-13
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Publication No.: US08399951B2Publication Date: 2013-03-19
- Inventor: Kenichi Takatori
- Applicant: Kenichi Takatori
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2004-257897 20040906
- Main IPC: H01L31/058
- IPC: H01L31/058

Abstract:
A thin-film semiconductor device includes a temperature sensor formed of a thin-film semiconductor and sensing a temperature as current, and a current-voltage converter formed of a thin-film semiconductor and having temperature dependence in which its current-voltage characteristic is different from that of the temperature sensor. A temperature sensed by the temperature sensor is converted to a voltage by the current-voltage converter.
Public/Granted literature
- US20110274140A1 THIN-FILM SEMICONDUCTOR DEVICE Public/Granted day:2011-11-10
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