Invention Grant
- Patent Title: Ion implanting apparatus and ion implanting method
- Patent Title (中): 离子注入装置和离子注入方法
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Application No.: US12521019Application Date: 2007-12-20
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Publication No.: US08399862B2Publication Date: 2013-03-19
- Inventor: Tadahiro Ohmi , Tetsuya Goto , Akinobu Teramoto , Takaaki Matsuoka
- Applicant: Tadahiro Ohmi , Tetsuya Goto , Akinobu Teramoto , Takaaki Matsuoka
- Applicant Address: JP Miyagi JP Tokyo
- Assignee: National University Corporation Tohoku University,Tokyo Electron Limited
- Current Assignee: National University Corporation Tohoku University,Tokyo Electron Limited
- Current Assignee Address: JP Miyagi JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2006-348315 20061225
- International Application: PCT/JP2007/074480 WO 20071220
- International Announcement: WO2008/078636 WO 20080703
- Main IPC: G21K5/10
- IPC: G21K5/10 ; H01S3/00 ; H05H3/02 ; A61N5/00 ; G21G5/00 ; G21G4/00

Abstract:
When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.
Public/Granted literature
- US20100025821A1 ION IMPLANTING APPARATUS AND ION IMPLANTING METHOD Public/Granted day:2010-02-04
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