Invention Grant
US08399794B2 Atmospheric pressure plasma, generating method, plasma processing method and component mounting method using same, and device using these methods
有权
大气压等离子体,生成方法,等离子体处理方法和使用其的部件安装方法以及使用这些方法的装置
- Patent Title: Atmospheric pressure plasma, generating method, plasma processing method and component mounting method using same, and device using these methods
- Patent Title (中): 大气压等离子体,生成方法,等离子体处理方法和使用其的部件安装方法以及使用这些方法的装置
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Application No.: US12299174Application Date: 2007-05-28
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Publication No.: US08399794B2Publication Date: 2013-03-19
- Inventor: Hiroyuki Tsuji , Kazuhiro Inoue
- Applicant: Hiroyuki Tsuji , Kazuhiro Inoue
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2006-149084 20060530; JP2006-201562 20060725; JP2006-222741 20060817
- International Application: PCT/JP2007/061241 WO 20070528
- International Announcement: WO2007/142166 WO 20071213
- Main IPC: B23K10/00
- IPC: B23K10/00

Abstract:
A first inert gas (5) is supplied into a reaction space (1) and a high-frequency power supply (4) applies a high-frequency electric field so that a primary plasma (6) composed of the first inert gas which has been made into the plasma is ejected from the reaction space. A mixed gas area (10) in which a mixed gas (8) having a second inert gas (12) as a main ingredient and a proper amount of a reactive gas (13) mixed is formed. The primary plasma collides into the mixed gas area to generate a secondary plasma (11) composed of the mixed gas which has been made into the plasma, and the secondary plasma is sprayed on a processed object (S) to carry out a plasma processing. Accordingly, the plasma processing is carried out in a wide range by an atmospheric pressure plasma generated by a small input power.
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