Invention Grant
- Patent Title: Process for high-pressure nitrogen annealing of metal nitrides
- Patent Title (中): 金属氮化物的高压氮退火工艺
-
Application No.: US13171042Application Date: 2011-06-28
-
Publication No.: US08399367B2Publication Date: 2013-03-19
- Inventor: Jason Schmitt
- Applicant: Jason Schmitt
- Applicant Address: US KS Wichita
- Assignee: Nitride Solutions, Inc.
- Current Assignee: Nitride Solutions, Inc.
- Current Assignee Address: US KS Wichita
- Agency: Polsinelli Shughart PC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The disclosure provides a process to anneal group III-V metal nitride crystals, wafers, epitaxial layers, and epitaxial films to reduce nitrogen vacancies. In particular, the disclosure provides a process to perform slow annealing of the group III-V metal nitrides in a high temperature and high pressure environment.
Public/Granted literature
- US20130005117A1 PROCESS FOR HIGH-PRESSURE NITROGEN ANNEALING OF METAL NITRIDES Public/Granted day:2013-01-03
Information query
IPC分类:
