Invention Grant
- Patent Title: Transistor and method for forming the same
- Patent Title (中): 晶体管及其形成方法
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Application No.: US13111875Application Date: 2011-05-19
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Publication No.: US08399328B2Publication Date: 2013-03-19
- Inventor: Haizhou Yin , Zhijong Luo , Huilong Zhu
- Applicant: Haizhou Yin , Zhijong Luo , Huilong Zhu
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Martine Penilla Group, LLP
- Priority: CN201010532061 20101029
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
The present invention relates to a transistor and the method for forming the same. The transistor of the present invention comprises a semiconductor substrate; a gate dielectric layer formed on the semiconductor substrate; a gate formed on the gate dielectric layer; and a source region and a drain region located in the semiconductor substrate and on respective sides of the gate, wherein only the source region comprises at least one dislocation. The method for forming a transistor according to the present invention comprises forming a mask layer on a semiconductor substrate on which a gate has been formed so that the mask layer covers the gate and the semiconductor substrate; patterning the mask layer to only expose at least a portion of a source region; performing a first ion implantation to the exposed portion of the source region; and annealing the semiconductor substrate so as to form a dislocation in the exposed portion of the source region.
Public/Granted literature
- US20120104486A1 TRANSISTOR AND METHOD FOR FORMING THE SAME Public/Granted day:2012-05-03
Information query
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