Invention Grant
- Patent Title: Electronic apparatus containing lanthanide yttrium aluminum oxide
- Patent Title (中): 含镧系元素钇铝氧化物的电子设备
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Application No.: US13345984Application Date: 2012-01-09
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Publication No.: US08399320B2Publication Date: 2013-03-19
- Inventor: Kie Y. Ahn , Leonard Forbes
- Applicant: Kie Y. Ahn , Leonard Forbes
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L21/316
- IPC: H01L21/316 ; H01L21/336 ; H01L21/8234
Abstract:
Electronic apparatus and methods of forming the electronic apparatus include a lanthanide yttrium aluminum oxide dielectric film on a substrate for use in a variety of electronic systems. The lanthanide yttrium aluminum oxide film may be structured as one or more monolayers. The lanthanide yttrium aluminum oxide film may be formed by a monolayer or partial monolayer sequencing process such as using atomic layer deposition.
Public/Granted literature
- US20120108052A1 ELECTRONIC APPARATUS CONTAINING LANTHANIDE YTTRIUM ALUMINUM OXIDE Public/Granted day:2012-05-03
Information query
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