Invention Grant
US08399317B2 Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor
有权
具有包括选择性地形成在金属栅极上的金属化合物的蚀刻停止层的晶体管及其方法
- Patent Title: Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method therefor
- Patent Title (中): 具有包括选择性地形成在金属栅极上的金属化合物的蚀刻停止层的晶体管及其方法
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Application No.: US13273771Application Date: 2011-10-14
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Publication No.: US08399317B2Publication Date: 2013-03-19
- Inventor: Andrew Ott , Sean King , Ajay Sharma
- Applicant: Andrew Ott , Sean King , Ajay Sharma
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/4763 ; H01L21/44
Abstract:
In one aspect, an apparatus may include a metal gate of a transistor. An etch stop layer may be selectively formed over the metal gate. The etch stop layer may include a metal compound. An insulating layer may be over the etch stop layer. A conductive structure may be included through the insulating layer to the metal gate. Methods of making such transistors are also disclosed.
Public/Granted literature
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