Invention Grant
- Patent Title: Process for improved chemcial vapor deposition of polysilicon
- Patent Title (中): 改善多晶硅化学气相沉积的工艺
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Application No.: US12478089Application Date: 2009-06-04
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Publication No.: US08399072B2Publication Date: 2013-03-19
- Inventor: Vithal Revankar , Sanjeev Lahoti
- Applicant: Vithal Revankar , Sanjeev Lahoti
- Applicant Address: US TX Houston
- Assignee: Savi Research, Inc.
- Current Assignee: Savi Research, Inc.
- Current Assignee Address: US TX Houston
- Agency: Baker & McKenzie, LLP
- Main IPC: C23C8/00
- IPC: C23C8/00 ; C23C16/00

Abstract:
A process for producing silicon rods including providing a reactor vessel containing at least one reaction chamber surrounded by a jacket, wherein a pre-heating fluid is circulated in the jacket; one or more electrode assemblies extending into the reaction chamber wherein each electrode assembly comprises a gas inlet, one or more heat transfer fluid inlets/outlets, at least one pair of silicon filaments, the filaments connected to each other at their upper ends with a silicon bridge to form a filament/slim rod assembly, each filament/slim rod assembly enclosed in an isolation jacket; a source of a silicon-bearing gas connected to the interior of the vessel for supplying the gas into the reaction chamber to produce a reaction and to deposit polycrystalline silicon on the filament by chemical vapor deposition thereby producing a rod of polycrystalline silicon; a heat transfer system that is connected to the jacketed reaction chamber that supplies heat transfer fluid to preheat the reaction chamber; and a power supply wherein the power supply supplies less than about 26,000 volts; wherein the apparatus does not include a heating finger is provided.
Public/Granted literature
- US20100272922A1 Process for Improved Chemical Vapor Deposition of Polysilicon Public/Granted day:2010-10-28
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