Invention Grant
- Patent Title: Thermoelectric material with low electrical resistivity and manufacture thereof
- Patent Title (中): 具有低电阻率和制造的热电材料
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Application No.: US13078615Application Date: 2011-04-01
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Publication No.: US08398897B2Publication Date: 2013-03-19
- Inventor: Sinn-Wen Chen , Sin-Jie Wu
- Applicant: Sinn-Wen Chen , Sin-Jie Wu
- Applicant Address: TW Hsinchu
- Assignee: National Tsing Hua University
- Current Assignee: National Tsing Hua University
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Priority: TW99139575A 20101117
- Main IPC: H01B1/02
- IPC: H01B1/02 ; H01L35/16

Abstract:
Thermoelectric material has attracted more attentions as a promising energy material in recent years. Research nowadays are devoted to improvement of figure-of-merit (zT=S2T/ρκ). Motivated by p-type AgSbTe2 compound, ternary Ag—Sb—Te has been reported as an important thermoelectric system. Although ternary AgSbTe2 compound has been considered as a candidate for thermoelectric materials with the advantages of low thermal conductivity (κp=0.6 WK−1 m−1), the relatively high electrical resistivity (ρ=7.5*10−3 Ωcm) has limited its applications. This invention disclosed brand-new Ag—Sb—Te bulk materials with very fine microstructures that nanoscale Ag2Te phase precipitate uniformly in the multi-phase matrix through class I reaction, liquid=Ag2Te+AgSbTe2+δ. Moreover, the electrical resistivity (ρ) measured by four-probe method is as low as 8.4*10−4 (Ωcm) at room temperature, which guarantees the promise of those ternary bulk materials.
Public/Granted literature
- US20120119164A1 THERMOELECTRIC MATERIAL WITH LOW ELECTRICAL RESISTIVITY AND MANUFACTURE THEREOF Public/Granted day:2012-05-17
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