Invention Grant
- Patent Title: Use of DC magnetron sputtering systems
- Patent Title (中): 使用直流磁控溅射系统
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Application No.: US12988016Application Date: 2009-04-14
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Publication No.: US08398833B2Publication Date: 2013-03-19
- Inventor: Eal H. Lee , Jaeyeon Kim
- Applicant: Eal H. Lee , Jaeyeon Kim
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Faegre Baker Daniels LLP
- International Application: PCT/US2009/040455 WO 20090414
- International Announcement: WO2009/151767 WO 20091217
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
Field-enhanced sputtering targets are disclosed that include: a core material; and a surface material, wherein at least one of the core material or the surface material has a field strength design profile and wherein the sputtering target comprises a substantially uniform erosion profile. Target assembly systems are also disclosed that include a field-enhanced sputtering target; and an anodic shield. Additionally, methods of producing a substantially uniform erosion on a sputtering target are described that include: providing an anodic shield; providing a cathodic field-enhanced target; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the cathodic field-enhanced target.
Public/Granted literature
- US20110031109A1 DESIGN AND USE OF DC MAGNETRON SPUTTERING SYSTEMS Public/Granted day:2011-02-10
Information query
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