Invention Grant
US08392855B2 Transferring pattern onto semiconductor substrate using optimum transfer condition determined for each divided area
有权
使用为每个分割区域确定的最佳转印条件将图案转印到半导体衬底上
- Patent Title: Transferring pattern onto semiconductor substrate using optimum transfer condition determined for each divided area
- Patent Title (中): 使用为每个分割区域确定的最佳转印条件将图案转印到半导体衬底上
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Application No.: US13040294Application Date: 2011-03-04
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Publication No.: US08392855B2Publication Date: 2013-03-05
- Inventor: Hiroyuki Morinaga , Ryoichi Inanami
- Applicant: Hiroyuki Morinaga , Ryoichi Inanami
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2010-172846 20100730
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
According to one embodiment, a pattern forming method comprises transferring a pattern formed in a surface of a template to a plurality of chip areas in a semiconductor substrate under different transfer conditions. Furthermore, the transferring the pattern formed in the surface of the template to the plurality of chip areas in the semiconductor substrate under the different transfer conditions comprises transferring the pattern formed in the surface of the template to the semiconductor substrate at least twice under each identical transfer condition. Moreover, the pattern forming method comprises dividing each of the plurality of chip areas into a plurality of areas, determining an optimum condition for each set of corresponding divided areas in the plurality of chip areas, and transferring the pattern onto the semiconductor substrate using the optimum transfer condition determined for each divided area.
Public/Granted literature
- US20120028378A1 METHOD FOR FORMING PATTERN AND A SEMICONDUCTOR DEVICE Public/Granted day:2012-02-02
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