Invention Grant
US08392768B2 Memory test system with advance features for completed memory system
有权
内存测试系统具有完善的内存系统的先进功能
- Patent Title: Memory test system with advance features for completed memory system
- Patent Title (中): 内存测试系统具有完善的内存系统的先进功能
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Application No.: US13064513Application Date: 2011-03-30
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Publication No.: US08392768B2Publication Date: 2013-03-05
- Inventor: Chia-Hao Lee , Ming-Chuan Huang
- Applicant: Chia-Hao Lee , Ming-Chuan Huang
- Applicant Address: TW Hsinchu
- Assignee: Sunplus Technology Co., Ltd.
- Current Assignee: Sunplus Technology Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Bacon & Thomas, PLLC
- Priority: TW99117957A 20100603
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
In a memory test system with advance features for completed memory system, the hardware components are independently configured to generate versatile test patterns for performing a programmable-loading test, a real case test, and a write-feedback test. The write-feedback test is employed to independently test a memory controller which is embedded in an integrated circuit without communicating with the external SDRAM. In the integrated circuit verification stage, the memory test system supports for analyzing and distinguishing the problems inside or outside of the integrated circuit, and testing individual write and read commands.
Public/Granted literature
- US20110302467A1 Memory test system with advance features for completed memory system Public/Granted day:2011-12-08
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