Invention Grant
US08392741B2 Latency control circuit and semiconductor memory device including the same
有权
延迟控制电路和包括其的半导体存储器件
- Patent Title: Latency control circuit and semiconductor memory device including the same
- Patent Title (中): 延迟控制电路和包括其的半导体存储器件
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Application No.: US12751671Application Date: 2010-03-31
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Publication No.: US08392741B2Publication Date: 2013-03-05
- Inventor: Kyung-Hoon Kim , Kyung-Whan Kim
- Applicant: Kyung-Hoon Kim , Kyung-Whan Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0010405 20100204
- Main IPC: G06F1/04
- IPC: G06F1/04

Abstract:
A latency control circuit includes a delay unit configured to delay an input signal for a delay corresponding to a phase difference between an external clock and an internal clock and generate a delayed input signal, a delay information generation unit configured to generate a delay information based on a latency information and a delay amount of the input signal caused by a chip including the latency control circuit, a shift unit configured to shift the delayed input signal for a time period corresponding to the delay information in synchronism with the internal clock and an asynchronous control unit configured to selectively control the shift unit to output the delayed input signal without performing a shift operation.
Public/Granted literature
- US20110187427A1 LATENCY CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2011-08-04
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