Invention Grant
- Patent Title: Fast exit from self-refresh state of a memory device
- Patent Title (中): 快速退出存储设备的自刷新状态
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Application No.: US12752918Application Date: 2010-04-01
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Publication No.: US08392650B2Publication Date: 2013-03-05
- Inventor: Kuljit S. Bains
- Applicant: Kuljit S. Bains
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G06F13/00
- IPC: G06F13/00

Abstract:
A system provides for a signal to indicate when a memory device exits from self-refresh. Thus, substantially at the same time (before or after) the memory device exits self-refresh, an indicator signal can be triggered to indicate normal operation or standard refresh operation and normal memory access of the memory device. A memory controller can access the indicator signal to determine whether the memory device is in self-refresh. Thus, the memory controller can more carefully manage the timing of sending a command to the memory device while reducing the delay time typically associated with detecting a self-refresh condition.
Public/Granted literature
- US20110246713A1 FAST EXIT FROM SELF-REFRESH STATE OF A MEMORY DEVICE Public/Granted day:2011-10-06
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