Invention Grant
- Patent Title: Fracture resistant metallization pattern for semiconductor lasers
- Patent Title (中): 半导体激光器的抗破裂金属化图案
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Application No.: US12426563Application Date: 2009-04-20
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Publication No.: US08391330B2Publication Date: 2013-03-05
- Inventor: Satish Chandra Chaparala , Martin Hai Hu , Lawrence Charles Hughes, Jr. , Chung-En Zah
- Applicant: Satish Chandra Chaparala , Martin Hai Hu , Lawrence Charles Hughes, Jr. , Chung-En Zah
- Applicant Address: US NY Corning
- Assignee: Corning Incorporated
- Current Assignee: Corning Incorporated
- Current Assignee Address: US NY Corning
- Agent Gregory V. Bean
- Main IPC: H01S3/097
- IPC: H01S3/097

Abstract:
Metallization patterns are provided to reduce the probability of chip fracture in semiconductor lasers. According to one embodiment disclosed herein, the pad edges of a metallization pattern extend across a plurality of crystallographic planes in the laser substrate. In this manner, cracks initiated at any given stress concentration would need to propagate across many crystallographic planes in the substrate to reach a significant size. Additional embodiments of the present disclosure relate to the respective geometries and orientations of adjacent pairs of contact pads. Still further embodiments are disclosed and claimed.
Public/Granted literature
- US20100265982A1 Fracture Resistant Metallization Pattern For Semiconductor Lasers Public/Granted day:2010-10-21
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