Invention Grant
US08391099B2 Integrated circuit memory device, system and method having interleaved row and column control
有权
集成电路存储器件,具有交错列和列控制的系统和方法
- Patent Title: Integrated circuit memory device, system and method having interleaved row and column control
- Patent Title (中): 集成电路存储器件,具有交错列和列控制的系统和方法
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Application No.: US13103548Application Date: 2011-05-09
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Publication No.: US08391099B2Publication Date: 2013-03-05
- Inventor: Kishore Kasamsetty , Lawrence Lai , Wayne Richardson
- Applicant: Kishore Kasamsetty , Lawrence Lai , Wayne Richardson
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C8/18
- IPC: G11C8/18

Abstract:
An integrated circuit memory device, system and method embodiments decode interleaved row and column request packets transferred on an interconnect at a first clock frequency. Separate row decode logic and column decode logic, clocked at a relatively slower second clock frequency, output independent column and row control internal signals to a memory core in response to memory commands in the request packets. An integrated circuit memory device includes an interface having separate row and column decode logic circuits for providing independent sets of row and control signals. A row decode logic circuit includes a first row decode logic circuit that provides a first row control signal, such as a row address, and a second row decode logic circuit that provides a second row control signal. A column decode logic circuit includes a first column decode logic circuit that provides a first column control signal, such as a column address and a second column logic circuit that provides a second column control signal.
Public/Granted literature
- US20110211415A1 Integrated Circuit Memory Device, System And Method Having Interleaved Row And Column Control Public/Granted day:2011-09-01
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