Invention Grant
US08391098B2 Data input/output circuit and method of semiconductor memory apparatus
有权
半导体存储装置的数据输入/输出电路和方法
- Patent Title: Data input/output circuit and method of semiconductor memory apparatus
- Patent Title (中): 半导体存储装置的数据输入/输出电路和方法
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Application No.: US13154622Application Date: 2011-06-07
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Publication No.: US08391098B2Publication Date: 2013-03-05
- Inventor: Seung-Lo Kim
- Applicant: Seung-Lo Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Venable LLP
- Agent Jeffri A. Kaminski
- Priority: KR10-2006-0011781 20070207
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A first timing control unit controls an active timing of a first control signal to output a first driving control signal. A first data input/output unit transmits write data from a data input/output buffer to a global input/output line or transmits read data from the global input/output line to the data input/output buffer, in response to the first driving control signal. A second timing control unit controls an active timing of a second control signal to output a second driving control signal. A second data input/output unit transmits the write data from the global input/output line to a local input/output line or transmits the read data from the local input/output line to the global input/output line, in response to the second driving control signal.
Public/Granted literature
- US20110305093A1 DATA INPUT/OUTPUT CIRCUIT AND METHOD OF SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2011-12-15
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