Invention Grant
US08391098B2 Data input/output circuit and method of semiconductor memory apparatus 有权
半导体存储装置的数据输入/输出电路和方法

  • Patent Title: Data input/output circuit and method of semiconductor memory apparatus
  • Patent Title (中): 半导体存储装置的数据输入/输出电路和方法
  • Application No.: US13154622
    Application Date: 2011-06-07
  • Publication No.: US08391098B2
    Publication Date: 2013-03-05
  • Inventor: Seung-Lo Kim
  • Applicant: Seung-Lo Kim
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: Venable LLP
  • Agent Jeffri A. Kaminski
  • Priority: KR10-2006-0011781 20070207
  • Main IPC: G11C8/00
  • IPC: G11C8/00
Data input/output circuit and method of semiconductor memory apparatus
Abstract:
A first timing control unit controls an active timing of a first control signal to output a first driving control signal. A first data input/output unit transmits write data from a data input/output buffer to a global input/output line or transmits read data from the global input/output line to the data input/output buffer, in response to the first driving control signal. A second timing control unit controls an active timing of a second control signal to output a second driving control signal. A second data input/output unit transmits the write data from the global input/output line to a local input/output line or transmits the read data from the local input/output line to the global input/output line, in response to the second driving control signal.
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