Invention Grant
US08391088B2 Pseudo-open drain type output driver having de-emphasis function, semiconductor memory device, and control method thereof
有权
具有去加重功能的伪开漏型输出驱动器,半导体存储器件及其控制方法
- Patent Title: Pseudo-open drain type output driver having de-emphasis function, semiconductor memory device, and control method thereof
- Patent Title (中): 具有去加重功能的伪开漏型输出驱动器,半导体存储器件及其控制方法
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Application No.: US13289240Application Date: 2011-11-04
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Publication No.: US08391088B2Publication Date: 2013-03-05
- Inventor: Youngsoo Sohn , Taeyoung Oh , Seungjun Bae
- Applicant: Youngsoo Sohn , Taeyoung Oh , Seungjun Bae
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0111144 20101109
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor memory device includes a memory cell array, an output driver having a pseudo-open drain (POD) structure and providing read data from the memory cell array in a de-emphasis mode, and control logic controlling the output driver in response to a read command to activate the de-emphasis mode. The control logic activates the de-emphasis mode only during an output period during which the read data is output by the output driver.
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