Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13164472Application Date: 2011-06-20
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Publication No.: US08391087B2Publication Date: 2013-03-05
- Inventor: Atsunori Hirobe
- Applicant: Atsunori Hirobe
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Foley & Lardner LLP
- Priority: JP2010-140541 20100621
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor device includes a bidirectional first bus arranged in common for a plurality of memory array basic units transferring write data and read data, a second bus transferring address/command, a plurality of first buffer circuits receiving addresses/command transferred to the second bus, wherein a control delay for generating the address/command and preparing write data to the first bus for write access and an output delay for outputting read data are both set to a length greater than or equal to a selection time for writing or reading of data to a memory cell of a selected area.
Public/Granted literature
- US20110310681A1 SEMICONDUCTOR DEVICE Public/Granted day:2011-12-22
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