According to one embodiment, a semiconductor memory device includes a first active area in a semiconductor substrate, memory cells on the semiconductor substrate, first bit lines, first line, a second line, a third line, and a fourth line. The first line extends in a direction that intersects with the first bit lines and transmits a control potential applied to unselected ones of second bit lines connected to the memory cells. The second line is electrically connected to the first line and extends along the first bit lines. The third line is electrically connected to the second line and extends in a direction that intersects with the first bit lines. The fourth line electrically connects both the third line and portions in the active area corresponding to nodes to which the control potential is applied.