According to one embodiment, a nonvolatile semiconductor memory device includes a first memory chip, a second memory chip, and a control chip. The first chip includes a first inductor configured to transmit/receive a signal, and a memory cell. The second chip is disposed on the first chip and includes a second inductor configured to transmit/receive a signal, and a memory cell. The control chip includes a control circuit configured to control the first and second chips, and a third inductor configured to transmit/receive a signal to/from the first and second inductors. The outer peripheries of the first and second inductors are included in a closed space produced by extending the outer periphery of the third inductor in a direction perpendicular to a plane that includes the third inductor. The inductance of the third inductor is greater than at least one of the inductances of the first and second inductors.